Manufacturer Part Number
SPW12N50C3
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor designed for power switching applications
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low on-resistance of 380 milliohms @ 7A, 10V
High drain-source voltage of 500V
Low gate-source voltage of ±20V
Low input capacitance of 1200 pF @ 25V
High continuous drain current of 11.6A at 25°C
Product Advantages
Excellent efficiency and performance for power switching
Robust design for reliable operation in harsh environments
Optimized for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (VDS): 500V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 380 milliohms @ 7A, 10V
Continuous Drain Current (ID): 11.6A @ 25°C
Input Capacitance (Ciss): 1200 pF @ 25V
Quality and Safety Features
RoHS3 compliant
Through-hole TO-247-3 package for secure mounting
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial power electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Key Reasons to Choose
Excellent efficiency and performance for power switching
Robust design for reliability in harsh environments
Wide operating temperature range for versatile applications
Optimized for high-voltage, high-current power electronics
