Manufacturer Part Number
SPW11N60CFD
Manufacturer
Infineon Technologies
Introduction
The SPW11N60CFD is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
Capable of handling high voltage up to 600V
Low on-resistance of 440mOhm at 7A, 10V
Fast switching with low gate charge of 64nC at 10V
Wide operating temperature range of -55°C to 150°C
High current rating of 11A at 25°C case temperature
Product Advantages
Excellent efficiency and power density
Robust design for reliable operation
Suitable for high-frequency switching applications
Compatible with a variety of control circuits
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 440mOhm @ 7A, 10V
Continuous Drain Current (Id): 11A @ 25°C case temperature
Input Capacitance (Ciss): 1200pF @ 25V
Power Dissipation (Ptot): 125W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package design
Compatibility
Suitable for a wide range of power electronics applications, such as power converters, motor drives, and switch-mode power supplies
Application Areas
Power electronics
Industrial automation
Renewable energy systems
Automotive electronics
Product Lifecycle
Currently available with no indication of discontinuation
Replacement or upgrade options may be available from Infineon or other manufacturers
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and power density
Robust design for reliable operation
Suitable for high-frequency switching applications
Compatible with a variety of control circuits
RoHS3 compliance for environmentally-friendly applications
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