Manufacturer Part Number
SPW11N60C3
Manufacturer
Infineon Technologies
Introduction
High-performance CoolMOS power MOSFET
Designed for high-efficiency, high-frequency power conversion applications
Product Features and Performance
Optimized for low switching losses and high-frequency operation
Extremely low on-state resistance (RDS(on))
Fast and reliable switching characteristics
Very low gate charge (Qg) and input capacitance (Ciss)
Excellent avalanche capability
Product Advantages
Improved energy efficiency
Reduced system size and cost
Enhanced system reliability
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Maximum Gate-to-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 380mΩ @ 7A, 10V
Continuous Drain Current (ID): 11A @ 25°C (Tc)
Input Capacitance (Ciss): 1200pF @ 25V
Power Dissipation (Pd): 125W (Tc)
Quality and Safety Features
Compliant with RoHS 3 directive
Reliable through-hole TO-247-3 package
Compatibility
Suitable for high-frequency, high-efficiency power conversion applications
Compatible with various power supply, inverter, and motor drive systems
Application Areas
Switch-mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Motor drives
Renewable energy systems
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available from Infineon's CoolMOS product family
Key Reasons to Choose This Product
Excellent energy efficiency and power density
Robust and reliable performance
Optimized for high-frequency, high-efficiency power conversion
Proven CoolMOS technology from a trusted semiconductor manufacturer