Manufacturer Part Number
SPW11N60S5
Manufacturer
Infineon Technologies
Introduction
The SPW11N60S5 is a high-voltage, high-power N-channel MOSFET transistor from Infineon Technologies' CoolMOS series.
Product Features and Performance
600V drain-to-source voltage
11A continuous drain current at 25°C
380mΩ maximum on-state resistance at 7A, 10V
1460pF maximum input capacitance at 25V
125W maximum power dissipation at Tc
Wide operating temperature range of -55°C to 150°C
Product Advantages
Low on-state resistance for high efficiency
Fast switching speed and low gate charge for high-frequency applications
High voltage rating for use in high-voltage power conversion circuits
Robust design and high reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 380mΩ @ 7A, 10V
Drain Current (Id): 11A (Tc)
Input Capacitance (Ciss): 1460pF @ 25V
Power Dissipation (Ptot): 125W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long-term performance
Compatibility
TO-247-3 package
Can be used in a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
The SPW11N60S5 is an active and widely-used product in Infineon's portfolio.
Replacement or upgrade options may be available, but the product is not currently nearing discontinuation.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for high efficiency
Fast switching speed and low gate charge for high-frequency operation
Robust and reliable design for demanding applications
Wide operating temperature range
RoHS3 compliance for use in environmentally-conscious applications
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