Manufacturer Part Number
SPD09P06PLGBTMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
P-Channel MOSFET
60V Drain to Source Voltage
±20V Gate to Source Voltage
250mOhm Maximum On-State Resistance @ 6.8A, 10V
7A Continuous Drain Current @ 25°C
450pF Maximum Input Capacitance @ 25V
42W Maximum Power Dissipation
Product Advantages
ROHS3 Compliant
Wide Operating Temperature Range: -55°C to 175°C
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 2V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Quality and Safety Features
ROHS3 Compliant
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Tape & Reel (TR) Packaging
Application Areas
Suitable for general power switching and control applications
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Wide operating temperature range
Low on-state resistance
High continuous drain current
Small package size for surface mount applications