Manufacturer Part Number
SPD11N10
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET device
Suitable for a wide range of power management and switching applications
Product Features and Performance
High voltage capability up to 100V
Low on-resistance for high efficiency
Fast switching capability
Robust design with high ruggedness
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent thermal management
Reliable and durable performance
Optimized for high-power, high-efficiency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 170mΩ @ 7.8A, 10V
Continuous Drain Current (Id): 10.5A @ 25°C (Tc)
Input Capacitance (Ciss): 400pF @ 25V
Power Dissipation (Pd): 50W (Tc)
Quality and Safety Features
Robust design for high reliability
Compliant with safety and environmental standards
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation
Household appliances
Product Lifecycle
This product is currently in active production
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for high efficiency
Fast switching performance
Wide operating temperature range
Robust and reliable design
Optimized for high-power, high-efficiency applications