Manufacturer Part Number
SPD08P06P
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
60V Drain to Source Voltage
300mOhm Rds(on) @ 6.2A, 10V
83A Continuous Drain Current @ 25°C
420pF Input Capacitance @ 25V
42W Power Dissipation (Max)
13nC Gate Charge @ 10V
Product Advantages
High efficiency
Low on-state resistance
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage: 60V
Rds(on): 300mOhm
Continuous Drain Current: 8.83A
Input Capacitance: 420pF
Power Dissipation: 42W
Quality and Safety Features
MOSFET technology for reliability
Surface mount package for compact design
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Switching power supplies
Motor drives
Battery chargers
Industrial controls
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose
High efficiency and low on-state resistance
Compact surface mount package
Reliable MOSFET technology
Wide range of compatible applications