Manufacturer Part Number
SPD08N50C3
Manufacturer
Infineon Technologies
Introduction
The SPD08N50C3 is a high-voltage N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
500V drain-to-source voltage rating
Low on-resistance of 600 mOhm at 4.6A, 10V
Fast switching with low gate charge of 32 nC at 10V
Operating temperature range of -55°C to 150°C
Capable of handling up to 7.6A of continuous drain current at 25°C
Product Advantages
Excellent power handling and efficiency
High breakdown voltage for high-voltage applications
Low conduction losses due to low on-resistance
Efficient switching performance
Key Technical Parameters
Vdss: 500V
Vgs(max): ±20V
Rds(on) (max): 600 mOhm
Id (continuous): 7.6A
Ciss (max): 750 pF
Pd (max): 83W
Quality and Safety Features
RoHS3 compliant
Packaged in a reliable TO-252-3 (D-Pak) surface-mount package
Compatibility
Suitable for a wide range of high-voltage power electronic applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement and upgrade options available from Infineon
Key Reasons to Choose
Excellent power handling and efficiency
High breakdown voltage for high-voltage applications
Low conduction losses
Efficient switching performance
Reliable packaging and RoHS compliance