Manufacturer Part Number
SPD07N60S5
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel power MOSFET
Product Features and Performance
Designed for high-voltage, high-power switching applications
Low on-state resistance for high efficiency
Fast switching speed
Excellent stability and reliability
Product Advantages
High breakdown voltage (600V)
Low on-state resistance
Fast switching speed
High power density
Excellent reliability and stability
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-State Resistance (Rds(on)): 600mΩ @ 4.6A, 10V
Continuous Drain Current (Id): 7.3A @ 25°C (Tc)
Input Capacitance (Ciss): 970pF @ 25V
Power Dissipation (Ptot): 83W @ 25°C (Tc)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS non-compliant
Meets safety and reliability standards
Compatibility
Suitable for high-voltage, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Induction heating
Industrial and consumer electronics
Product Lifecycle
Currently available
No indication of discontinuation
Replacements and upgrades may be available
Several Key Reasons to Choose This Product
High breakdown voltage for high-voltage applications
Low on-state resistance for high efficiency
Fast switching speed for high-frequency operation
High power density for compact designs
Excellent reliability and stability for long-term use