Manufacturer Part Number
SPD07N60C3
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
High Voltage (600V) Operation
Low On-Resistance (600mOhm)
High Continuous Drain Current (7.3A)
Wide Operating Temperature Range (-55°C to 150°C)
High Power Dissipation (83W)
Product Advantages
Efficient Power Conversion
High Reliability
Compact Design
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mOhm
Continuous Drain Current (Id): 7.3A
Input Capacitance (Ciss): 790pF
Gate Charge (Qg): 27nC
Quality and Safety Features
Robust and Reliable Design
Compliance with Industry Standards
Compatibility
Surface Mount Packaging (PG-TO252-3)
Compatible with a Wide Range of Applications
Application Areas
Power Supplies
Motor Drives
Inverters
Lighting Systems
Industrial Electronics
Product Lifecycle
Currently in Production
Replacements and Upgrades Available
Key Reasons to Choose This Product
Excellent Power Efficiency
High Voltage Capability
Low On-Resistance
Wide Operating Temperature Range
Compact and Reliable Design
Versatile Compatibility