Manufacturer Part Number
SPD06N80C3ATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
800V Drain to Source Voltage
900mOhm Maximum Rds(on) @ 3.8A, 10V
6A Continuous Drain Current @ 25°C
785pF Maximum Input Capacitance @ 100V
83W Maximum Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
High Voltage Capability
Low On-Resistance
High Current Handling
Suitable for High Power Switching Applications
Key Technical Parameters
Vds: 800V
Vgs (Max): ±20V
Rds(on) (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Id (Continuous) @ 25°C: 6A
Ciss (Max) @ Vds: 785pF @ 100V
Power Dissipation (Max): 83W
Quality and Safety Features
ROHS3 Compliant
PG-TO252-3 Packaging
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Application Areas
High Power Switching
Power Conversion
Motor Drives
Industrial Electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Suitable for high power, high switching frequency applications
Compact, surface mount packaging