Manufacturer Part Number
SPD08P06PGBTMA1
Manufacturer
Infineon Technologies
Introduction
Power MOSFET transistor for high-performance power switching and control applications
Product Features and Performance
P-channel MOSFET with low on-resistance
Wide operating temperature range of -55°C to 175°C
Low gate charge for fast switching
Optimized for high-frequency, high-efficiency power conversion
Suitable for various power control and switching applications
Product Advantages
Excellent power efficiency and thermal management
Reliable performance in demanding environments
Enables compact and lightweight power circuit designs
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
Maximum Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 300mΩ @ 10A, 6.2V
Continuous Drain Current (ID): 8.83A @ 25°C
Input Capacitance (Ciss): 420pF @ 25V
Power Dissipation (Ptot): 42W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Surface mount package (PG-TO252-3)
Compatible with various power control and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation and control
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
Wide operating temperature range for reliable performance
Fast switching capability enabled by low gate charge
Compact and lightweight power circuit design
RoHS3 compliance for environmental responsibility