Manufacturer Part Number
SPD04N60C3
Manufacturer
Infineon Technologies
Introduction
High performance N-Channel CoolMOS power MOSFET
Product Features and Performance
600V drain-source voltage
Low on-resistance (RDS(on)) of 950mOhm @ 2.8A, 10V
High continuous drain current of 4.5A at 25°C case temperature
Low input capacitance of 490pF @ 25V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent energy efficiency and low switching losses
Optimized for high frequency, high efficiency power conversion
Robust and reliable design
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 950mOhm
Drain Current (ID): 4.5A
Input Capacitance (Ciss): 490pF
Power Dissipation: 50W
Quality and Safety Features
Solid metal oxide semiconductor field-effect transistor (MOSFET) technology
Strict quality control and reliability testing
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacement or upgrade options are available from the manufacturer
Key Reasons to Choose
Excellent energy efficiency and low switching losses
Robust and reliable design for long-term, high-performance operation
Wide operating temperature range for versatile applications
Optimized for high frequency, high efficiency power conversion
SPD04N10PGINENOI