Manufacturer Part Number
SPD03N60S5
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
600V Drain-Source Voltage (Vdss)
4Ω Maximum On-Resistance (Rds(on)) at 2A, 10V
2A Continuous Drain Current (Id) at 25°C
420pF Maximum Input Capacitance (Ciss) at 25V
38W Maximum Power Dissipation at Tc
Product Advantages
Efficient power conversion with low on-resistance
Suitable for high-voltage, high-power applications
Reliable and robust design
Key Technical Parameters
N-Channel MOSFET Technology
±20V Maximum Gate-Source Voltage (Vgs)
5V Maximum Gate Threshold Voltage (Vgs(th)) at 135A
16nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -55°C to 150°C
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Compatible with Surface Mount Mounting
Application Areas
Switching Power Supplies
Motor Drives
Industrial Electronics
Household Appliances
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose
Excellent power efficiency and low on-resistance
Suitable for high-voltage, high-power applications
Reliable and robust design
Wide operating temperature range
RoHS3 compliance for environmental friendliness
