Manufacturer Part Number
SPD02N80C3ATMA1
Manufacturer
Infineon Technologies
Introduction
The SPD02N80C3ATMA1 is a single N-Channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
800V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
7Ω Maximum On-Resistance (Rds(on)) at 1.2A, 10V
2A Continuous Drain Current (Id) at 25°C
290pF Maximum Input Capacitance (Ciss) at 100V
42W Maximum Power Dissipation at Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent power handling capability
Low on-resistance for high efficiency
Wide operating temperature range
Reliable and robust design
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
9V Maximum Gate Threshold Voltage (Vgs(th)) at 120A
16nC Maximum Gate Charge (Qg) at 10V
Surface Mount Mounting Type
Quality and Safety Features
RoHS3 Compliant
PG-TO252-3 Manufacturer's Packaging
Compatibility
Compatible with various power electronics and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies (SMPS)
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade parts available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and low power loss
Wide temperature range for versatile applications
Reliable and robust construction
RoHS compliance for environmental sustainability
