Manufacturer Part Number
SPD02N50C3
Manufacturer
Infineon Technologies
Introduction
The SPD02N50C3 is a N-channel MOSFET transistor from Infineon Technologies' CoolMOS series. It is designed for a wide range of power conversion and control applications.
Product Features and Performance
High-voltage MOSFET with drain-source voltage of 560V
Low on-resistance of 3Ω at 1.1A and 10V gate-source voltage
Operating temperature range of -55°C to 150°C
Input capacitance of 190pF at 25V drain-source voltage
Continuous drain current of 1.8A at 25°C case temperature
Maximum power dissipation of 25W at case temperature
Product Advantages
Excellent performance and efficiency in power conversion applications
High voltage capability with low on-resistance
Wide operating temperature range
Compact TO-252-3 package for surface mount applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 560V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3Ω @ 1.1A, 10V
Continuous Drain Current (Id): 1.8A @ 25°C
Input Capacitance (Ciss): 190pF @ 25V
Power Dissipation (Ptot): 25W @ Tc
Quality and Safety Features
Reliable and robust MOSFET design
Compliant with RoHS and REACH regulations
Compatibility
Compatible with a wide range of power electronics and control systems
Application Areas
Switched-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Infineon Technologies
Key Reasons to Choose This Product
High voltage and low on-resistance for efficient power conversion
Compact and surface-mountable package
Wide operating temperature range for reliable performance
Proven reliability and quality from Infineon Technologies
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