Manufacturer Part Number
SPD03N60C3
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Technology: MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Power Dissipation (Max): 38W (Tc)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3.9V @ 135A
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Product Advantages
High voltage and current handling capability
Low on-resistance
Wide operating temperature range
Key Technical Parameters
Manufacturer's packaging: PG-TO252-3-313
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Mounting Type: Surface Mount
Quality and Safety Features
Designed and manufactured to high quality and safety standards
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Suitable for use in various power electronics, industrial, and consumer applications
Product Lifecycle
Active product, no discontinuation or replacement plans known at this time
Key Reasons to Choose This Product
High performance and reliability
Extensive operating temperature range
Efficient power handling capability
Compact and easy to integrate design
Proven track record of quality and safety
