Manufacturer Part Number
SPD04P10PG
Manufacturer
Infineon Technologies
Introduction
The SPD04P10PG is a P-channel power MOSFET transistor from Infineon Technologies. It is part of the SIPMOS series and is designed for a variety of power switching and control applications.
Product Features and Performance
100V drain-source voltage
±20V maximum gate-source voltage
1Ω maximum on-resistance at 2.8A, 10V
4A continuous drain current at 25°C
319pF maximum input capacitance at 25V
38W maximum power dissipation at Tc
Operating temperature range of -55°C to 175°C
Product Advantages
Low on-resistance for efficient power switching
High voltage and current handling capabilities
Compact surface mount TO-252-3 (D-Pak) package
Suitable for a wide range of power applications
Key Technical Parameters
MOSFET technology
P-channel FET type
4V maximum gate threshold voltage at 380A
10V maximum drive voltage
12nC maximum gate charge at 10V
Quality and Safety Features
Designed and manufactured to high quality standards
Compliant with industry safety and reliability requirements
Compatibility
The SPD04P10PG is a direct replacement for many similar power MOSFET transistors in the market.
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Wide operating temperature range for reliable performance
Compact surface mount package for space-constrained designs
Proven reliability and quality from a reputable manufacturer
Compatibility with many similar power MOSFET applications