Manufacturer Part Number
SPD04P10PGBTMA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-Channel MOSFET device designed for a wide range of power management and control applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 1Ω @ 2.8A, 10V for efficient power conversion
High drain current capability of 4A (Tc) for handling higher loads
Wide operating temperature range of -55°C to 175°C (TJ)
Low input capacitance (Ciss) of 319pF @ 25V for fast switching
High power dissipation of 38W (Tc) for handling higher power
Product Advantages
Optimized performance for power management and control applications
Excellent efficiency and thermal performance
Robust design for reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100V
Gate-to-Source Voltage (VGS): ±20V
Threshold Voltage (Vgs(th)): 4V @ 380A
Drive Voltage (Max RDS(on), Min RDS(on)): 10V
Gate Charge (Qg): 12nC @ 10V
Quality and Safety Features
RoHS3 compliant
ESD protection for improved reliability
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power management and control applications
Can be used as a direct replacement for similar MOSFET devices
Application Areas
Power supplies
Motor drivers
Inverters
Lighting control
Industrial automation
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for power-critical applications
Robust design for reliable operation in harsh environments
Optimized for a wide range of power management and control applications
Trusted Infineon quality and reliability
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