Manufacturer Part Number
MMBTA42LT1
Manufacturer
Infineon Technologies
Introduction
This is a NPN bipolar junction transistor (BJT) from Infineon Technologies, suitable for a wide range of electronic applications.
Product Features and Performance
Power rating: 225 mW
Collector-Emitter Breakdown Voltage: 300 V
Collector Current: 500 mA
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 500 mV @ 2 mA, 20 mA
DC Current Gain: 40 @ 30 mA, 10 V
Transition Frequency: 50 MHz
Product Advantages
High breakdown voltage for increased circuit protection
Low collector cutoff current for improved energy efficiency
Suitable for a wide range of high-voltage, high-current applications
Key Technical Parameters
Transistor Type: NPN
Mounting Type: Surface Mount
Package: SOT-23-3 (TO-236)
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Compatibility
Can be used in a variety of electronic circuits and applications
Application Areas
Suitable for use in power supplies, amplifiers, switches, and other high-voltage, high-current electronic circuits
Product Lifecycle
This is an active product, not nearing discontinuation
Replacement or upgrade options may be available from Infineon Technologies
Key Reasons to Choose This Product
High breakdown voltage for increased circuit protection
Low collector cutoff current for improved energy efficiency
Surface mount package for easy integration into compact designs
Suitable for a wide range of high-voltage, high-current applications
RoHS3 compliance for environmental responsibility