Manufacturer Part Number
MMBTA42LT3G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
NPN transistor
Switching and amplification applications
Wide operating temperature range of -55°C to 150°C
High breakdown voltage of 300V
Maximum collector current of 500mA
Transition frequency of 50MHz
Product Advantages
Compact SOT-23-3 surface mount package
RoHS3 compliant
Tape and reel packaging for automated assembly
Key Technical Parameters
Power dissipation: 225mW
Collector-emitter breakdown voltage: 300V
Collector current (max): 500mA
Collector cutoff current: 100nA
Collector-emitter saturation voltage: 500mV
DC current gain (min): 40
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with standard BJT circuit designs
Application Areas
Switching and amplification circuits
Power supplies
Instrumentation
General-purpose electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement and upgrade options available from onsemi
Key Reasons to Choose
Wide operating temperature range
High breakdown voltage
High current capability
Good frequency performance
Compact surface mount package
RoHS3 compliance for environmental friendliness
Tape and reel packaging for automated assembly