MMBTA42LT1 - onsemi

Manufacturer Part Number

MMBTA42LT1

Manufacturer

onsemi

Introduction

The MMBTA42LT1 is a high-voltage, high-power NPN bipolar junction transistor (BJT) designed for use in a variety of power amplifier and switching applications.

Product Features and Performance

High voltage capability up to 300V collector-emitter breakdown voltage

High collector current rating up to 500mA

High frequency operation up to 50MHz transition frequency

Low collector-emitter saturation voltage of 500mV @ 20mA collector current

High DC current gain (hFE) of at least 40 @ 30mA collector current

Product Advantages

Suitable for a wide range of power amplifier and switching applications

Robust design with high voltage and current handling capabilities

Reliable performance in various operating conditions

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 300V

Collector Current (IC): 500mA

DC Current Gain (hFE): 40 (min) @ 30mA, 10V

Transition Frequency (fT): 50MHz

Quality and Safety Features

RoHS non-compliant

Packaged in SOT-23-3 (TO-236) surface mount package

Compatibility

This transistor is compatible with various electronic circuit designs that require a high-voltage, high-power NPN bipolar junction transistor.

Application Areas

Power amplifiers

Switching circuits

Voltage regulators

Motor control

Industrial and automotive electronics

Product Lifecycle

The MMBTA42LT1 is an active product, and no information on discontinuation or replacement is currently available.

Several Key Reasons to Choose This Product

High voltage and current handling capabilities

High-frequency operation for efficient switching and amplification

Reliable and robust design for various power applications

Compact surface mount packaging for space-constrained designs

Compatibility with a wide range of electronic circuits and systems