MMBTA42LT1G - onsemi

Manufacturer Part Number

MMBTA42LT1G

Manufacturer

onsemi

Introduction

General-purpose NPN bipolar junction transistor (BJT)

Suitable for amplifier, switching, and logic circuit applications

Product Features and Performance

Operates within a wide temperature range of -55°C to 150°C

Capable of handling up to 225 mW of power

Supports a maximum collector-emitter breakdown voltage of 300 V

Supports a maximum collector current of 500 mA

Provides a minimum DC current gain (hFE) of 40 at 30 mA and 10 V

Offers a transition frequency of 50 MHz

Product Advantages

Compact surface mount package (SOT-23-3)

RoHS-compliant design

Suitable for various electronic circuit applications

Key Technical Parameters

Package: SOT-23-3 (TO-236)

Collector-Emitter Breakdown Voltage (Max): 300 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage (Max): 500 mV

DC Current Gain (hFE) (Min): 40

Transition Frequency: 50 MHz

Quality and Safety Features

RoHS3 compliant

Suitable for use in various electronic applications

Compatibility

Compatible with a wide range of electronic circuits and devices

Application Areas

Suitable for use in amplifier, switching, and logic circuit applications

Widely used in consumer electronics, industrial equipment, and other electronic devices

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgraded versions may become available in the future

Key Reasons to Choose This Product

Ability to operate within a wide temperature range

Compact surface mount package for efficient space utilization

Robust performance characteristics, including high voltage, current, and frequency capabilities

Compliance with RoHS regulations for environmentally-friendly design

Compatibility with a wide range of electronic circuits and applications