IRS2183SPBF - Infineon Technologies

Manufacturer Part Number

IRS2183SPBF

Manufacturer

Infineon Technologies

Introduction

High voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Product Features and Performance

Dual independent channels

Integrated under-voltage lockout protection

Integrated dead-time for shoot-through protection

Matched propagation delay for both channels

3V and 5V input logic compatible

Product Advantages

High side bootstrap capability up to 600V

Output source/sink current capability of 1.9A/2.3A

Low quiescent current

Tolerant to negative transient voltage on VS pin

Key Technical Parameters

Driven Configuration: Half-Bridge

Number of Drivers: 2

Voltage - Supply: 10V ~ 20V

Logic Voltage - VIL, VIH: 0.8V, 2.5V

Current - Peak Output: 1.9A (Source), 2.3A (Sink)

Input Type: Inverting and Non-Inverting

High Side Voltage - Max (Bootstrap): 600V

Rise / Fall Time (Typ): 40ns / 20ns

Operating Temperature: -40°C ~ 150°C

Quality and Safety Features

Under-voltage lockout for both VCC and VBS

Over-temperature shut down

Lead-free and RoHS compliant

Compatibility

Suitable for driving IGBT and N-Channel MOSFETs in a half-bridge configuration

Application Areas

Motor drives

Inverters for Solar systems

Uninterruptible power supplies

High-frequency power converters

Product Lifecycle

Product Status: Obsolete

Replacements or upgrades may be available, consult manufacturer for more information

Key Reasons to Choose This Product

High integration reduces component count

Robust design ensures reliable operation in harsh environments

Efficient operation with low power dissipation

Ease of use with standard logic level inputs

Suitable for high-frequency applications due to fast rise/fall times