IRS21844STRPBF - Infineon Technologies

Manufacturer Part Number

IRS21844STRPBF

Manufacturer

Infineon Technologies

Introduction

High-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Product Features and Performance

Integrated bootstrap diode

CMOS Schmitt-triggered inputs with pull-down

Under-voltage lockout for both channels

3V and 5V input logic compatible

Matched propagation delay for both channels

Product Advantages

Optimized for low-side and high-side configurations

Excellent latch immunity on all inputs and outputs

High pulse current buffer stage for minimal driver cross-conduction

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Synchronous

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Voltage - Supply: 10V ~ 20V

Logic Voltage - VIL, VIH: 0.8V, 2.5V

Current - Peak Output (Source, Sink): 1.9A, 2.3A

Input Type: Non-Inverting

High Side Voltage - Max (Bootstrap): 600V

Rise / Fall Time (Typ): 40ns, 20ns

Operating Temperature: -40°C ~ 150°C (TJ)

Quality and Safety Features

Over-temperature and over-current protection

ESD protection

Compatibility

Compatible with standard MOSFET and IGBT power devices

Application Areas

Motor drives

High frequency and DC to AC converters

Class D audio amplifiers

Switch Mode Power Supplies (SMPS)

Product Lifecycle

Active

Currently not flagged for discontinuation

Replacement or upgrades may be available

Several Key Reasons to Choose This Product

High integration level reduces BOM count and system cost

In-built protection features ensure long-term reliability

High switching speeds suitable for high-frequency applications

Enhanced ruggedness against negative transients

%">Flexible bootstrap operation allows for easy adaptation to different topologies