IRS21844MTRPBF - Infineon Technologies

Manufacturer Part Number

IRS21844MTRPBF

Manufacturer

Infineon Technologies

Introduction

Gate driver integrated circuit designed for power management applications

Product Features and Performance

Half-Bridge driver configuration

Synchronous channel operation

Supports 2 N-Channel MOSFET gate driving

Peak output current of 1.9A (source), 2.3A (sink)

Non-inverting input type

High side voltage support up to 600V (bootstrap)

Fast rise and fall times, typically 40ns and 20ns

Operates over a wide temperature range (-40°C to 150°C)

Tape & Reel packaging for efficient assembly processes

Product Advantages

Enhanced power efficiency for half-bridge configurations

Optimized for driving N-Channel MOSFETs

High peak output current capabilities

Robust thermal performance with extended temperature range

Key Technical Parameters

Driven Configuration: Half-Bridge

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage - Supply: 10V to 20V

Logic Voltage - VIL, VIH: 0.8V, 2.5V

High Side Voltage - Max: 600V (Bootstrap)

Quality and Safety Features

Comprehensive thermal management

Integrated under-voltage lockout protection

Reliable operation within specified temperature range

Compatibility

Designed for use with N-Channel MOSFET arrangements

Suitable for a broad range of half-bridge-based power management applications

Application Areas

Power supply units

Motor control systems

Inverters and converters

High-power electrical systems

Product Lifecycle

Product Status: Active

Not currently nearing discontinuation

Availability of replacements and upgrades ensured by Infineon Technologies' support

Several Key Reasons to Choose This Product

High integration level simplifies system design

Extended operating temperature suits demanding environments

Reliable performance with high bootstrap voltage capacity

Adaptability to various power system designs

Cost-efficient packaging for mass production

Fast switching capabilities enhancing overall system efficiency