Manufacturer Part Number
IRS2181STRPBF
Manufacturer
Infineon Technologies
Introduction
Integrated Circuit (IC) for power management applications
Specifically designed as a gate driver for IGBTs and N-Channel MOSFETs
Product Features and Performance
Operates on a wide supply voltage range of 10V to 20V
Provides two independent gate driver channels
Supports half-bridge configuration
Capable of driving IGBT and N-Channel MOSFET gates
Fast rise and fall times of 40ns and 20ns respectively
High peak output current of 1.9A (source) and 2.3A (sink)
Maximum bootstrap voltage of 600V
Product Advantages
Supports a wide range of power semiconductor devices
Delivers high-speed switching performance
Provides robust and reliable gate driving capabilities
Suitable for various power conversion applications
Key Technical Parameters
Operating temperature range: -40°C to 150°C
RoHS3 compliant
8-SOIC package
Surface mount design
Quality and Safety Features
Robust and reliable design
Thermal protection circuitry
Overcurrent protection
Compatibility
Compatible with IGBT and N-Channel MOSFET power devices
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial automation and control systems
Product Lifecycle
Currently available and in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Versatile gate driver solution for a wide range of power semiconductors
Excellent switching performance with fast rise and fall times
Robust and reliable design with protective features
Suitable for various power conversion applications
Cost-effective and readily available option