Manufacturer Part Number
IRFI4020H-117P
Manufacturer
Infineon Technologies
Introduction
High-performance dual N-channel MOSFET transistor
Ideal for power switching and control applications
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Supports a maximum power dissipation of 21W
Dual N-channel configuration for compact and efficient design
Product Advantages
Low on-resistance (RDS(on)) for improved efficiency
High voltage rating (200V) for a wide range of applications
High current handling capability (9.1A continuous drain current)
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
RDS(on) (max): 100mΩ @ 5.5A, 10V
Input Capacitance (Ciss): 1240pF @ 25V
Gate Threshold Voltage (Vgs(th)): 4.9V @ 100A
Gate Charge (Qg): 29nC @ 10V
Quality and Safety Features
RoHS3 compliant for environmental responsibility
TO-220-5 Full-Pak package for reliable thermal management
Compatibility
Compatible with a wide range of power electronic circuits and systems
Application Areas
Power switching and control applications
Motor drives
Power supplies
Inverters and converters
Product Lifecycle
This product is currently in active production and availability is stable.
Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
Exceptional performance and efficiency due to low RDS(on) and high voltage/current ratings
Compact and reliable design with dual N-channel configuration
Wide operating temperature range and RoHS3 compliance for versatile applications
Proven track record and technical support from Infineon Technologies