Manufacturer Part Number
IRFI4019H-117P
Manufacturer
Infineon Technologies
Introduction
High-performance dual N-channel MOSFET transistor in a TO-220-5 Full-Pak package
Product Features and Performance
Optimized for high-frequency switching applications
Low on-resistance for efficient power conversion
Fast switching speed
High power density
Reliable operation in a wide temperature range
Product Advantages
Excellent thermal management with TO-220-5 package
Efficient power conversion
High reliability and long lifespan
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
On-resistance (Rds(on)): 95mΩ @ 5.2A, 10V
Continuous Drain Current (Id): 8.7A @ 25°C
Input Capacitance (Ciss): 810pF @ 25V
Threshold Voltage (Vgs(th)): 4.9V @ 50A
Gate Charge (Qg): 20nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable operation in -55°C to 150°C temperature range
Compatibility
Compatible with a wide range of power electronics and control circuit applications
Application Areas
Switching power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Infineon
Several Key Reasons to Choose This Product
Excellent performance and efficiency in high-frequency switching applications
Robust design and reliable operation in demanding environments
Cost-effective solution for power conversion and control applications
Proven technology and reputation of Infineon Technologies