Manufacturer Part Number
IRFI4212H-117PXKMA1
Manufacturer
Infineon Technologies
Introduction
This is a dual N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Operates at a wide temperature range of -55°C to 150°C (TJ)
Rated for a maximum power dissipation of 18W (Tc)
Features low on-resistance of 72.5mOhm @ 6.6A, 10V
Offers high input capacitance of 490pF @ 50V
Requires a maximum gate threshold voltage of 5V @ 250A
Product Advantages
Excellent thermal management capability
Low power loss due to low on-resistance
Suitable for high-power switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Continuous Drain Current (Id) @ 25°C: 11A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Quality and Safety Features
RoHS3 compliant
Through-hole mounting type
Compatibility
Compatible with a variety of high-power switching applications
Application Areas
Suitable for use in power supplies, motor drives, and other high-power switching circuits
Product Lifecycle
This product is currently available and actively supported by the manufacturer.
Key Reasons to Choose This Product
Excellent thermal performance and power handling capability
Low on-resistance for efficient power conversion
Suitable for a wide range of high-power switching applications
Reliable and RoHS-compliant design