Manufacturer Part Number
IRFI4212H-117P
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
TO-220-5 Full-Pak Package
Dual N-Channel MOSFET
Operating Temperature: -55°C to 150°C
Power Rating: 18W
Drain-Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 72.5mΩ @ 6.6A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Input Capacitance (Ciss): 490pF @ 50V
Threshold Voltage (Vgs(th)): 5V @ 250A
Gate Charge (Qg): 18nC @ 10V
Product Advantages
Dual N-Channel MOSFET in a single package for space-saving design
Low on-resistance for high efficiency
High voltage and current handling capabilities
Suitable for various power conversion and control applications
Key Technical Parameters
Transistor Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
Packaging: TO-220-5 Full Pack, Through Hole Mounting
Quality and Safety Features
RoHS3 Compliant, Environmentally Friendly
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial controls
Product Lifecycle
Current production model, no discontinuation planned
Several Key Reasons to Choose This Product
Compact dual MOSFET design for space-saving
Low on-resistance for high efficiency
High voltage and current handling capabilities
Suitable for a wide range of power electronics applications
Proven reliability and performance from Infineon Technologies
IRFI4110GPBFInfineon TechnologiesMOSFET N-CH 100V 72A TO220AB FP