Manufacturer Part Number
IRF7488TRPBF
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
80V Drain-to-Source Voltage
29mOhm Maximum On-Resistance
3A Continuous Drain Current at 25°C
1680pF Maximum Input Capacitance
5W Maximum Power Dissipation
-55°C to 150°C Operating Temperature Range
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Product Advantages
High efficiency due to low on-resistance
Suitable for high power and high frequency applications
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 29mOhm
Drain Current (Id Continuous): 6.3A
Input Capacitance (Ciss Max): 1680pF
Power Dissipation (Max): 2.5W
Quality and Safety Features
RoHS3 compliant
8-SOIC (0.154", 3.90mm Width) package
Compatibility
Surface mount package
Suitable for various electronic circuit applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power amplifiers
General-purpose power control
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade parts may be available in the future
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved performance
Wide operating temperature range for versatile applications
Surface mount package for easy integration into electronic circuits
RoHS3 compliance for environmentally-friendly use
Trusted Infineon Technologies brand and quality