IRF7478TRPBF - Infineon Technologies

Manufacturer Part Number

IRF7478TRPBF

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET transistor

Designed for a wide range of power management and switching applications

Product Features and Performance

Low on-resistance (Rds(on)) of 26 mΩ @ 4.2 A, 10 V

Wide operating temperature range of -55°C to 150°C

High drain-to-source voltage (Vdss) of 60 V

Fast switching speed and low gate charge (Qg) of 31 nC @ 4.5 V

Compact 8-SOIC (0.154", 3.90mm Width) surface mount package

Product Advantages

Excellent power efficiency and thermal performance

Reliable and robust design for demanding applications

Ease of integration and compatibility with various circuit designs

Key Technical Parameters

Drain to Source Voltage (Vdss): 60 V

Gate-to-Source Voltage (Vgs Max): ±20 V

Continuous Drain Current (Id) @ 25°C: 7 A

Input Capacitance (Ciss Max) @ Vds: 1740 pF

Power Dissipation (Max) @ 25°C: 2.5 W

Quality and Safety Features

RoHS3 compliant

Reliable and high-quality manufacturing process

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power supplies

Motor drives

Lighting and LED control

Industrial and consumer electronics

Product Lifecycle

Currently in production

No imminent discontinuation or replacement plans known

Several Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Reliable and robust design for demanding applications

Ease of integration and compatibility with various circuit designs

Wide operating temperature range and high voltage capability

Compact and space-saving 8-SOIC surface mount package