Manufacturer Part Number
IRF7480MTRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF7480MTRPBF is a high-performance N-channel MOSFET in the DirectFET Isometric ME package.
Product Features and Performance
High current capability of 217A continuous drain current at 25°C case temperature
Low on-resistance of 1.2 mΩ at 132A and 10V gate-source voltage
Fast switching speed with low gate charge of 185 nC at 10V gate-source voltage
Wide operating temperature range from -55°C to 150°C
Product Advantages
Compact DirectFET Isometric ME package for high power density
Excellent thermal performance with low junction-to-case thermal resistance
Robust design with high gate-source voltage rating of ±20V
Key Technical Parameters
Drain-to-source voltage (Vdss): 40V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 1.2 mΩ
Continuous drain current (Id): 217A at 25°C case temperature
Input capacitance (Ciss): 6680 pF
Power dissipation (Ptot): 96W at 25°C case temperature
Quality and Safety Features
ROHS3 compliant for environmental responsibility
Tested and qualified to industrial standards for reliable operation
Compatibility
The IRF7480MTRPBF is a direct replacement for other N-channel MOSFETs in the HEXFET and StrongIRFET series.
Application Areas
High-current power switching and control applications
Automotive and industrial power electronics
Inverters, motor drives, and power supplies
Product Lifecycle
The IRF7480MTRPBF is an active product and not nearing discontinuation. Replacement or upgraded options are available from Infineon's product portfolio.
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance and fast switching
Compact and thermally efficient DirectFET Isometric ME package
Robust design with high voltage and temperature ratings
Direct replacement for common HEXFET and StrongIRFET MOSFETs
Reliable and RoHS-compliant for industrial and automotive applications