IRF7492PBF - Infineon Technologies

Manufacturer Part Number

IRF7492PBF

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel power MOSFET in a small 8-SOIC package.

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Low on-resistance (79 mΩ @ 2.2 A, 10 V)

Low input capacitance (1820 pF @ 25 V)

High drain-to-source voltage (200 V)

Suitable for high-frequency, high-efficiency switching applications

Product Advantages

Compact 8-SOIC package

Low power dissipation (2.5 W)

Excellent thermal performance

Reliable and robust design

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 200 V

Gate-to-Source Voltage (Vgs): ±20 V

Continuous Drain Current (Id): 3.7 A

On-Resistance (Rds(on)): 79 mΩ

Input Capacitance (Ciss): 1820 pF

Gate Charge (Qg): 59 nC

Quality and Safety Features

Meets relevant industry standards and safety requirements

Robust design for reliable operation

Compatibility

Suitable for a wide range of high-frequency, high-efficiency switching applications

Application Areas

Switching power supplies

Motor drives

Inverters

DC-DC converters

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and readily available.

Replacements and upgrades may be available in the future as technology advances.

Several Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance, high voltage rating, and low input capacitance

Compact 8-SOIC package for space-constrained applications

Reliable and robust design for long-term, dependable operation

Suitable for a wide range of high-frequency, high-efficiency switching applications

Readily available and supported by the manufacturer