Manufacturer Part Number
IRF7341TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF7341TRPBF is a dual N-channel power MOSFET transistor in an 8-SOIC package. It is part of the HEXFET series and suitable for a wide range of power control and switching applications.
Product Features and Performance
Dual N-channel MOSFET configuration
55V drain-to-source voltage rating
Low on-resistance of 50 mΩ at 4.7A, 10V
7A continuous drain current at 25°C
Fast switching with low gate charge of 36 nC at 10V
Logic-level gate with 1V threshold voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact and space-saving 8-SOIC package
High power density and efficiency
Suitable for a wide range of power control and switching applications
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
On-Resistance (Rds(on)): 50 mΩ @ 4.7A, 10V
Continuous Drain Current (Id): 4.7A @ 25°C
Input Capacitance (Ciss): 740 pF @ 25V
Gate Charge (Qg): 36 nC @ 10V
Gate Threshold Voltage (Vgs(th)): 1V @ 250 μA
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Surface mount 8-SOIC package
Suitable for a wide range of power control and switching applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgraded products may become available in the future as technology evolves.
Key Reasons to Choose This Product
Compact and space-saving package
High power density and efficiency
Suitable for a wide range of power control and switching applications
Reliable and robust design with wide operating temperature range
RoHS3 compliance for environmental sustainability