Manufacturer Part Number
IRF7341QTRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 N-Channel (Dual) MOSFET
Drain to Source Voltage (Vdss): 55V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Product Advantages
Compact 8-SOIC (0.154", 3.90mm Width) surface mount package
Low on-resistance for improved efficiency
Logic level gate for easy drive
Key Technical Parameters
Power Max: 2.4W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Package: Cut Tape (CT)
Quality and Safety Features
Reliable MOSFET technology from Infineon
Compatibility
Compatible with a wide range of electronic circuits and devices
Application Areas
Suitable for various power conversion and control applications
Product Lifecycle
Currently in production, no immediate plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose this Product
Compact and efficient surface mount package
Low on-resistance for improved performance
Logic level gate for easy integration
Reliable Infineon MOSFET technology
Suitable for a wide range of applications