Manufacturer Part Number
IRF7341GTRPBF
Manufacturer
Infineon Technologies
Introduction
Dual N-Channel MOSFET transistor with high power handling capability and low on-resistance.
Product Features and Performance
High power handling up to 2.4W
Low on-resistance of 50mΩ @ 5.1A, 10V
Wide operating temperature range of -55°C to 175°C
High input capacitance of 780pF @ 25V
Low gate charge of 44nC @ 10V
Product Advantages
Efficient power conversion and control
Robust and reliable performance
Suitable for high-power switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Continuous Drain Current (Id): 5.1A
Threshold Voltage (Vgs(th)): 1V @ 250A (Min)
On-Resistance (Rds(on)): 50mΩ @ 5.1A, 10V
Quality and Safety Features
RoHS3 compliant
Surface mount package (8-SOIC)
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
Currently available
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High power handling and efficiency
Robust and reliable performance
Wide operating temperature range
Low on-resistance for improved energy efficiency
Suitable for a variety of high-power switching applications