Manufacturer Part Number
IRF7342PBF
Manufacturer
Infineon Technologies
Introduction
The IRF7342PBF is a dual P-channel MOSFET transistor in an 8-SOIC package.
Product Features and Performance
2 P-Channel MOSFET transistors in a single package
55V Drain-to-Source Voltage
105mOhm On-Resistance at 3.4A, 10V
4A Continuous Drain Current at 25°C
690pF Input Capacitance at 25V
Logic Level Gate with 1V Threshold Voltage at 250μA
38nC Gate Charge at 10V
Product Advantages
Compact dual-transistor design saves board space
Low on-resistance for efficient power switching
Logic-level gate drive for easy microcontroller interfacing
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage: 55V
On-Resistance: 105mOhm
Continuous Drain Current: 3.4A
Input Capacitance: 690pF
Gate Threshold Voltage: 1V
Gate Charge: 38nC
Quality and Safety Features
RoHS3 compliant
8-SOIC surface mount package
Compatibility
Can be used as a replacement or upgrade for similar dual P-channel MOSFET transistors
Application Areas
Power switching and control circuits
Motor drives
Battery management systems
General electronic applications
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgraded parts may become available in the future
Key Reasons to Choose This Product
Compact dual-transistor design saves board space
Low on-resistance for efficient power switching
Logic-level gate drive for easy microcontroller interfacing
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmental responsibility
IRF7342QIR