Manufacturer Part Number
IRF7343PBF
Manufacturer
Infineon Technologies
Introduction
The IRF7343PBF is a dual N-channel and P-channel MOSFET array in an 8-pin SOIC package. It is designed for use in a variety of power switching applications.
Product Features and Performance
Dual N-channel and P-channel MOSFET configuration
Low on-resistance for efficient power switching
Operates over a wide temperature range of -55°C to 150°C
Capable of handling continuous drain current up to 4.7A (N-channel) and 3.4A (P-channel)
Low input capacitance and gate charge for fast switching
Robust ESD protection
Product Advantages
Compact 8-pin SOIC package for space-saving design
Integrated N-channel and P-channel MOSFETs for simplified circuit design
Efficient power switching performance
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
On-resistance (Rds(on)): 50mΩ (max) at 4.7A, 10V
Input Capacitance (Ciss): 740pF (max) at 25V
Gate Threshold Voltage (Vgs(th)): 1V (max) at 250μA
Gate Charge (Qg): 36nC (max) at 10V
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
The IRF7343PBF is compatible with a wide range of electronic circuits and systems that require efficient power switching, such as:
Power supplies
Motor control circuits
Embedded systems
Industrial automation equipment
Application Areas
Power management
Motor control
Embedded systems
Industrial automation
Product Lifecycle
The IRF7343PBF is an active product and is currently in production. Infineon Technologies continues to manufacture and support this product. Replacement or upgraded products may become available in the future.
Several Key Reasons to Choose This Product
Dual N-channel and P-channel MOSFET configuration for simplified circuit design
Efficient power switching performance with low on-resistance
Wide operating temperature range of -55°C to 150°C
Compact 8-pin SOIC package for space-saving designs
Robust ESD protection for improved reliability
RoHS3 compliance for environmental sustainability