Manufacturer Part Number
IRF530NS
Manufacturer
Infineon Technologies
Introduction
The IRF530NS is a high-performance, N-channel power MOSFET transistor from Infineon Technologies.
Product Features and Performance
Capable of handling up to 100V drain-to-source voltage
Maximum continuous drain current of 17A at 25°C
Low on-resistance of 90mΩ at 9A, 10V
High input capacitance of 920pF at 25V
Supports a wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power handling and efficiency
Robust and reliable performance
Suitable for a wide range of power electronic applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 90mΩ @ 9A, 10V
Continuous Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 920pF @ 25V
Power Dissipation: 3.8W (Ta), 70W (Tc)
Quality and Safety Features
Manufactured using Infineon's advanced MOSFET technology
RoHS non-compliant
Suitable for various surface mount packaging options
Compatibility
Suitable for a wide range of power electronic applications, including power supplies, motor drives, and switching circuits
Application Areas
Power conversion and control
Motor drives
Switching circuits
Power supplies
Product Lifecycle
The IRF530NS is an established and widely used power MOSFET transistor
Replacement or upgraded options may be available from Infineon or other manufacturers
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable performance across a wide temperature range
Suitable for a variety of power electronic applications
Manufactured by a reputable semiconductor company, Infineon Technologies