IRF5305STRLPBF - Infineon Technologies

Manufacturer Part Number

IRF5305STRLPBF

Manufacturer

Infineon Technologies

Introduction

High-performance power MOSFET transistor

Designed for a wide range of power management and control applications

Product Features and Performance

P-channel enhancement mode MOSFET

55V drain-source voltage (Vdss)

31A continuous drain current (Id) at 25°C

Low on-resistance (Rds(on)) of 60mΩ at 16A, 10V

Fast switching speed

High input capacitance (Ciss) of 1200pF at 25V

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent power efficiency due to low on-resistance

Fast switching enables high-frequency operation

Robust design for demanding applications

Compact D2PAK package for space-constrained designs

Key Technical Parameters

Drain-Source Voltage (Vdss): 55V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 60mΩ at 16A, 10V

Drain Current (Id): 31A at 25°C

Input Capacitance (Ciss): 1200pF at 25V

Power Dissipation: 3.8W at Ta, 110W at Tc

Quality and Safety Features

RoHS3 compliant

Reliable D2PAK package

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Switching power supplies

Motor drives

Lighting control

Industrial automation

Automotive electronics

Product Lifecycle

Currently available

No known plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Fast switching speed for high-frequency operation

Robust design for demanding applications

Compact D2PAK package for space-constrained designs

Wide operating temperature range for versatile use

RoHS3 compliance for environmental friendliness