Manufacturer Part Number
IRF530NPBF
Manufacturer
Infineon Technologies
Introduction
The IRF530NPBF is a N-Channel MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for use in various power electronics applications.
Product Features and Performance
High current handling capability up to 17A continuous at 25°C
Low on-resistance of 90mΩ at 10V gate-source voltage
Wide operating temperature range from -55°C to 175°C
Fast switching capability with low gate charge of 37nC at 10V
High voltage rating of 100V drain-source voltage
Product Advantages
Excellent power handling and efficient performance
Robust design for wide temperature operation
Efficient switching for high-frequency applications
Compact TO-220AB package for easy installation
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 17A at 25°C
On-Resistance (Rds(on)): 90mΩ at 9A, 10V
Input Capacitance (Ciss): 920pF at 25V
Power Dissipation (Ptot): 70W at 25°C
Quality and Safety Features
RoHS3 compliant for environmental regulations
Reliable MOSFET design for long-term performance
TO-220AB package with solid metal base for thermal management
Compatibility
Suitable for a wide range of power electronics applications
Can be used as a replacement or upgrade for similar MOSFET devices
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Lighting and industrial control systems
Product Lifecycle
The IRF530NPBF is an actively supported product in Infineon's portfolio
Replacement or upgraded models may become available in the future as technology advances
Key Reasons to Choose This Product
High current and voltage handling capabilities
Efficient performance with low on-resistance
Wide operating temperature range for reliability
Fast switching capability for high-frequency applications
Compact and thermally efficient package design