Manufacturer Part Number
IRF530NSTRLPBF
Manufacturer
Infineon Technologies
Introduction
The IRF530NSTRLPBF is a N-channel power MOSFET transistor in a D2PAK (TO-263) package. It is part of the HEXFET series and designed for high power, high frequency switching applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 100V
Gate-Source Voltage (Vgs) of ±20V
On-Resistance (Rds(on)) of 90mΩ @ 9A, 10V
Continuous Drain Current (Id) of 17A at 25°C
Input Capacitance (Ciss) of 920pF @ 25V
Power Dissipation of 3.8W at 25°C, 70W at Case Temperature
Product Advantages
Low on-resistance for high efficiency
High power handling capability
Suitable for high frequency switching
Robust design for reliable operation
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)) of 4V @ 250A
Gate Charge (Qg) of 37nC @ 10V
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Designed for high reliability and long lifespan
Compatibility
Standard D2PAK (TO-263) package
Compatible with various power electronics and motor drive circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose
Excellent performance-to-cost ratio
Robust and reliable design
Proven track record in high-power, high-frequency applications
Wide operating temperature range of -55°C to 175°C
Compatibility with standard power semiconductor packages