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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIRF5210LPBF
Infineon Technologies
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See specifications for product details.

IRF5210LPBF - Infineon Technologies

Manufacturer Part Number
IRF5210LPBF
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IRF5210LPBF
ECAD Model
Parts Description
MOSFET P-CH 100V 38A TO262
Detailed Description
Package
TO-262-3 Long Leads, I²Pak, TO-262AA
Data sheet
IRF5210LPBF.pdf
RoHs Status
ROHS3 Compliant
In stock: 5440

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Quantity

Specifications

IRF5210LPBF Tech Specifications
Infineon Technologies - IRF5210LPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IRF5210LPBF

Product Attribute Attribute Value  
Manufacturer Infineon Technologies  
Vgs(th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package TO-262  
Series HEXFET®  
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V  
Power Dissipation (Max) 3.1W (Ta), 170W (Tc)  
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA  
Package Tube  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Through Hole  
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V  
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V  
FET Type P-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Drain to Source Voltage (Vdss) 100 V  
Current - Continuous Drain (Id) @ 25°C 38A (Tc)  
Base Product Number IRF5210  

Parts Introduction

Manufacturer Part Number

IRF5210LPBF

Manufacturer

Infineon Technologies

Introduction

The IRF5210LPBF is a P-channel power MOSFET from Infineon Technologies, designed for high-performance switching applications.

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

High drain-to-source voltage of 100V

Low on-resistance (RDS(on)) of 60mΩ at 38A and 10V gate

High continuous drain current of 38A at 25°C

Low input capacitance (Ciss) of 2780pF at 25V

High power dissipation of 3.1W (Ta) and 170W (Tc)

Product Advantages

Excellent performance for high-power switching applications

Robust design for reliable operation in harsh environments

Efficient power handling and low power loss

Key Technical Parameters

Drain-to-Source Voltage (VDS): 100V

Gate-to-Source Voltage (VGS): ±20V

On-Resistance (RDS(on)): 60mΩ @ 38A, 10V

Continuous Drain Current (ID): 38A @ 25°C

Input Capacitance (Ciss): 2780pF @ 25V

Power Dissipation (Pd): 3.1W (Ta), 170W (Tc)

Quality and Safety Features

RoHS3 compliant

TO-262 package for efficient heat dissipation

Robust design for reliable operation

Compatibility

This power MOSFET is compatible with a wide range of high-power switching applications, such as power supplies, motor drives, and industrial automation systems.

Application Areas

Power supplies

Motor drives

Industrial automation

Switching applications

Product Lifecycle

The IRF5210LPBF is an active product, and Infineon Technologies continues to support and manufacture it. Replacements or upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent performance for high-power switching applications with low on-resistance and high current handling capability.

Wide operating temperature range and robust design for reliable operation in harsh environments.

Efficient power handling and low power loss, contributing to improved system efficiency and performance.

RoHS3 compliance and efficient heat dissipation in the TO-262 package, ensuring quality and safety.

Compatibility with a wide range of high-power switching applications, providing versatility and flexibility.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IRF5210LPBF

Product Attribute IRF5210LPBF IRF5210STRRPBF IRF520S IRF520NSTRRPBF
Part Number IRF5210LPBF IRF5210STRRPBF IRF520S IRF520NSTRRPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 230 nC @ 10 V 16 nC @ 10 V 25 nC @ 10 V
FET Feature - - - -
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V 60mOhm @ 38A, 10V 270mOhm @ 5.5A, 10V 200mOhm @ 5.7A, 10V
Mounting Type Through Hole Surface Mount Surface Mount Surface Mount
Series HEXFET® HEXFET® - HEXFET®
Base Product Number IRF5210 IRF5210 IRF520 -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 38A (Tc) 9.2A (Tc) 9.7A (Tc)
Package Tube Tape & Reel (TR) Tube Tape & Reel (TR)
FET Type P-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V 2780 pF @ 25 V 360 pF @ 25 V 330 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 170W (Tc) 3.1W (Ta), 170W (Tc) 3.7W (Ta), 60W (Tc) 3.8W (Ta), 48W (Tc)
Supplier Device Package TO-262 D2PAK D²PAK (TO-263) D2PAK

IRF5210LPBF Datasheet PDF

Download IRF5210LPBF pdf datasheets and Infineon Technologies documentation for IRF5210LPBF - Infineon Technologies.

Other Related Documents
IR Part Numbering System.pdf
PCN Design/Specification
Mult Dev Label Chgs 8/Sep/2021.pdf Mult Dev Label Chgs Aug/2020.pdf
PCN Packaging
Mult Dev Label Chgs 18/Feb/2020.pdf Tube Pkg MOQ Standardization 28/Jul/2017.pdf
PCN Assembly/Origin
Mult Dev Wafer Chgs 31/Mar/2021.pdf

Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Your Faithful Supply Chain Partner -

Contact us if you have any questions.

  1. Phone
    +00852 9146 4856

Certifications & Memberships

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Infineon Technologies

IRF5210LPBF

Infineon Technologies
32D-IRF5210LPBF

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