Manufacturer Part Number
IRF5210STRRPBF
Manufacturer
Infineon Technologies
Introduction
This product is a single P-channel MOSFET transistor from the HEXFET series, designed for power management and switching applications.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
60mΩ On-Resistance (Rds(on)) at 38A Drain Current, 10V Gate Voltage
38A Continuous Drain Current (Id) at 25°C Case Temperature
2780pF Input Capacitance (Ciss) at 25V Drain-to-Source Voltage
230nC Gate Charge (Qg) at 10V Gate Voltage
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power handling
High drain current capability
Wide operating temperature range
Suitable for power management and switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mΩ @ 38A, 10V
Continuous Drain Current (Id): 38A at 25°C
Input Capacitance (Ciss): 2780pF @ 25V
Gate Charge (Qg): 230nC @ 10V
Quality and Safety Features
RoHS3 compliant
D2PAK package for surface mount assembly
Compatibility
Can be used in a variety of power management and switching applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Reliable performance in power management and switching applications
Industry-standard D2PAK packaging for easy integration