Manufacturer Part Number
IRF5210PBF
Manufacturer
Infineon Technologies
Introduction
The IRF5210PBF is a P-channel power MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for a variety of power management and control applications.
Product Features and Performance
100V drain-source voltage rating
Low on-resistance of 60 milliohms
40A continuous drain current
Wide operating temperature range of -55°C to 175°C
Fast switching characteristics
Low gate charge of 180 nC
Product Advantages
Excellent power handling and efficiency
Compact TO-220AB package
Rugged design for reliable operation
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60 milliohms
Continuous Drain Current (Id): 40A
Input Capacitance (Ciss): 2700 pF
Power Dissipation (Tc): 200W
Quality and Safety Features
RoHS3 compliant
Reliable operation within the specified temperature range
Compatibility
Through-hole mounting in TO-220AB package
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Industrial and consumer electronics
Product Lifecycle
The IRF5210PBF is an active product from Infineon Technologies
Replacement or upgrade options may be available from Infineon or other manufacturers
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and reliable design
Suitable for high-frequency switching applications
Wide operating temperature range
RoHS3 compliance for environmental sustainability