IRF520NSTRLPBF - Infineon Technologies

Manufacturer Part Number

IRF520NSTRLPBF

Manufacturer

Infineon Technologies

Introduction

This product is a high-performance N-Channel MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for a wide range of power electronics applications.

Product Features and Performance

High current capability up to 9.7A continuous drain current at 25°C

Low on-resistance of 200mOhm at 5.7A, 10V

Wide operating temperature range of -55°C to 175°C

Fast switching speed and low gate charge of 25nC at 10V

High drain-source voltage rating of 100V

Product Advantages

Excellent thermal performance and power dissipation of up to 48W at 25°C

Robust and reliable design suitable for demanding applications

Compact D2PAK surface mount package

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

Continuous Drain Current (Id): 9.7A at 25°C

On-Resistance (Rds(on)): 200mOhm at 5.7A, 10V

Input Capacitance (Ciss): 330pF at 25V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality and reliability standards

Compatibility

The IRF520NSTRLPBF is compatible with a wide range of power electronics applications and can be used as a replacement or upgrade for similar MOSFET devices.

Application Areas

Switch-mode power supplies

Motor drives

Power inverters

Amplifiers

General purpose power switching

Product Lifecycle

This product is an active and widely used MOSFET device from Infineon. No discontinuation or end-of-life plans have been announced, and replacements or upgrades are readily available.

Key Reasons to Choose This Product

High current handling and low on-resistance for efficient power conversion

Robust and reliable performance over a wide temperature range

Compact surface mount packaging for space-constrained designs

Excellent thermal management capabilities

RoHS compliance for environmentally conscious applications