Manufacturer Part Number
IRF520NPBF
Manufacturer
Infineon Technologies
Introduction
The IRF520NPBF is a N-channel power MOSFET transistor from Infineon Technologies, designed for a wide range of power switching applications.
Product Features and Performance
N-channel MOSFET with HEXFET technology
Drain-to-Source Voltage (Vdss) of 100V
Maximum Drain Current (Id) of 9.7A at 25°C
On-Resistance (Rds(on)) as low as 200mΩ at 10V Gate-Source Voltage
Input Capacitance (Ciss) of 330pF at 25V Drain-Source Voltage
Power Dissipation (Ptot) of 48W at 25°C case temperature
Operating Temperature range of -55°C to 175°C
Product Advantages
Efficient power conversion with low on-resistance
High-speed switching capabilities
Robust design for reliable operation
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 200mΩ @ 5.7A, 10V
Drain Current (Id): 9.7A @ 25°C
Input Capacitance (Ciss): 330pF @ 25V
Power Dissipation (Ptot): 48W @ 25°C
Quality and Safety Features
RoHS3 compliant
Packaged in a TO-220AB through-hole package
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switch-mode power supplies
Inductive loads (motors, solenoids)
Inverters
Motor drives
Chopper circuits
Product Lifecycle
The IRF520NPBF is an active and widely available product from Infineon Technologies.
Replacement or upgraded products may be available in the future, but the IRF520NPBF remains a reliable and commonly used option.
Key Reasons to Choose This Product
Excellent power handling capabilities with low on-resistance
Fast switching speed and high efficiency
Robust design for reliable operation in harsh environments
Wide operating temperature range
RoHS3 compliance for environmentally-friendly applications