Manufacturer Part Number
IRF200S234
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel Power MOSFET
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
High drain-to-source voltage: 200V
Low on-state resistance: 16.9mΩ
High continuous drain current: 90A
Low input capacitance: 6484pF
High power dissipation: 417W
Product Advantages
Excellent performance in high-power and high-voltage applications
Efficient power conversion and control
Reliable and durable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 16.9mΩ
Continuous Drain Current (Id): 90A
Input Capacitance (Ciss): 6484pF
Power Dissipation (Tc): 417W
Quality and Safety Features
Robust construction for reliable operation
Compliance with safety and environmental standards
Compatibility
Suitable for a wide range of high-power and high-voltage applications
Application Areas
Switching power supplies
Motor drives
Electric vehicles
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Exceptional performance in high-power, high-voltage applications
Efficient power conversion and control
Reliable and durable design
Wide operating temperature range
Compliance with safety and environmental standards
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